Buried Boron

Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink

Preamorphization of ultrashallow implanted boron in silicon on insulator is optimized to produce an abrupt boxlike doping profile with negligible electrical deactivation and significantly reduced transient enhanced diffusion. The effect is achieved by positioning the as-implanted amorphous/ crystalline interface close to the buried oxide interface to minimize interstitials while leaving a singl...

Boron Sheets and Boron Nanotubes

Based on an ab initio study, we present a structure model for a broad boron sheet, which is the precursor of boron nanotubes. Furthermore we could show that, in contrast to the armchair types, zigzag boron nanotubes have no surface tension (strain energy). As result, we predict that boron nanotubes will exhibit a chirality dependent stability, something that is unique among all nanotubular mate...

Blast Mitigation Analysis of Semi-Buried Structure

Semi-buried structures are most commonly used at first line of defense along the border between two countries. This demands investigation of their dynamic behaviour under blast loading. Herein, a semi-buried structure with foam sandwiched walls and buttresses to reduce the effect of blast is analysed. The effect of provision of different configurations of buttresses and foam core between two la...

Not Always Buried Deep

Plasmonics in buried structures.

We describe plasmon propagation in silica-filled coupled nanovoids fully buried in gold. Propagation bands and band gaps are shown to be tunable through the degree of overlap and plasmon hybridization between contiguous voids. The effect of disorder and fabrication imperfections is thoroughly investigated. Our work explores a novel paradigm for plasmon photonics relying on plasmon modes in meta...